| PART |
Description |
Maker |
| 2SC3583 2SC3583R 2SC3583S 2SC3583R35 2SC3583R34 2S |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体
BJT 双极型晶体管
|
NEC Corp.
NEC, Corp.
|
| 2SC3585 2SC3585-T1B 2SC3585R43 2SC3585R45 2SC3585R |
For amplify microwave and low noise.
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 10V的五（巴西）总裁| 35MA一（c）|的SOT - 346
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 晶体管|晶体管|叩| 10V的五（巴西）总裁| 35MA一（c）|的SOT - 346
|
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| 2SC5397 |
For High Frequency Amplify, Middle Frequency Amplify Silicon NPN Epitaxial Type Micro
|
Isahaya Electronics Cor...
|
| AMFW-7S-122128-100P2 AMFW-7S-117128-65B AMFW-5S-12 |
8000 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
3700 MHz - 4200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
9600 MHz - 9800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11700 MHz - 12750 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
7200 MHz - 7800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11400 MHz - 12200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| INC5001AP1 |
For low frequency power amplify Silicon NPN Epitaxial
|
Isahaya Electronics Corporation
|
| INC6002AC1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN TRANSISTOR
|
Isahaya Electronics Corporation
|
| 2SA1603T 2SA1603S 2SA1603 2SA1603Q 2SA1603R |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corpora...
ISAHAYA[Isahaya Electronics Corporation]
|
| 2SA2193 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| INA6006AS1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Cor...
|
| 2SC5815 2SC5817 2SC5816 2SC5814 |
For Low Frequency Amplify Application Silicon NPN Epitaxial Type
|
Isahaya Electronics Corporation
|
| INA5001AP1 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SC5384 |
125mW SMD NPN transistor, maximum rating: 25V Vceo, 30mA Ic, 35 to 180 hFE.
Transistor For High Frequency Amplify, Medium Frequency Amplify Application Silicon NPN Epitaxial Type Ultra Super Mini
|
Isahaya Electronics Corporation
|
